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Custom silicon carbide ceramic components

We customize every aspect to meet your precise requirements, from purity grades to dimensional tolerances. Below are examples from our previous projects, showcasing high-precision abrasives, refractory liners, semiconductor substrates, and grinding balls for mineral processing. Ready to design your custom parts? Contact us today—our engineers can collaborate on CAD models and rapid prototyping to accelerate your schedule.

A Comprehensive Guide to Silicon Carbide Ceramics

History of silicon carbide ceramics

The history of silicon carbide (SiC) ceramics begins in 1893, when American chemist Edward Goodrich Aitchson accidentally discovered it while attempting to synthesize diamonds by heating a mixture of sand and carbon to produce “carborandum”—the first commercial abrasive. Initially prized for its Mohs hardness of 9.5, SiC quickly revolutionized grinding and polishing by the early 1900s, surpassing natural abrasives like corundum. The 1920s marked its entry into refractories, with the Aitchson process, which enabled the mass production of furnace linings amid the steel boom.

After World War II, SiC’s potential as a semiconductor became apparent in the 1950s, with early diodes exploiting its wide bandgap (3.26 eV) for high-power electronics—pioneered by General Electric. The energy crisis of the 1970s accelerated its use in thermal engines, while advances in chemical vapor deposition (CVD) in the 1980s opened up pure crystals for LEDs and power devices. Biomedical applications grew in the 1990s for biocompatible coatings. Today, global production exceeds 1.5 million tons annually, fueled by electric vehicles (SiC MOSFETs), renewable energy (solar panel inverters), and 5G—evolving from an abrasive standard to a $5 billion powerhouse in harsh, high-performance applications.

Its polytypic structures—more than 200 α/β forms—have enabled bandgap tuning, from blue LEDs (Nobel Prize 1990) to 1200-volt electric vehicles, reflecting SiC’s shift from sand to “silicon’s rival.” The recent surge in demand for mineral/cement grinding media underscores its enduring abrasive heritage.

Understanding Silicon Carbide Ceramics

Silicon carbide (SiC) ceramics, a covalent compound of silicon and carbon, are a leading class of non-oxide materials renowned for their unmatched hardness, thermal/electrical conductivity, and resistance to oxidation, corrosion, and thermal shock up to 1600°C. With a density of ~3.2 g/cm³ (60% of steel) but a flexural strength of 400 MPa and an HV of 2100, SiC excels in abrasive, high-thermal, or electrochemical environments where metals degrade. Its hexagonal (a) or cubic (b) polygons allow for tuned band gaps (2.4–3.3 eV), ideal for semiconductors; the self-lubricating microstructure yields friction coefficients <0.2.

Its performance is based on strong Si-C bonds, providing a CTE of 3.5 x 10⁻⁶ K⁻¹ for composites without mismatches and a conductivity of 90–490 W/m K for radiators. Inert to acids and alkalis (except HF), it is indispensable for chemical pumps or armor. More expensive than aluminum oxide ($20–50/kg vs. $5–20), SiC’s 10–20 times the service life and efficiency gains (e.g., +30% range for electric vehicles) justify the premium, with processability aiding sustainability.

The black and green hues of SiC, free from impurities, offer aesthetic and functional versatility; it is non-toxic and FDA-compliant for medical and food contact. From Aitchson sand to Wolfspeed plates, SiC bridges the mechanical and electronic worlds, with grinding balls exemplifying its abrasive power in mineral processing.

Silicon carbide ceramic options

Silicon carbide ceramics are available in formulations tailored by synthesis and dopants for conductivity, purity, or transparency. Key differences include Black SiC, Green SiC, Reaction-Bonded SiC (RBSC), Sintered SiC (SSC), and CVD SiC. Each optimizes the phase (a/b) for its application. Breakdown:

Black silicon carbide (Black SiC)

Overview : Manufactured in an Eichson furnace at 2200-2500°C from petroleum coke/silica, 97-99% SiC with iron impurities.

Improvements : Economical ($10–20/kg), high viscosity (K_IC 4) for bulk abrasives; suitable for grinding balls in heavy mills.

Applications : Grinding wheels, refractories, wear tiles in mining/cement and SiC grinding balls for efficient ore grinding.

Advantages of Silicon Carbide Ceramics

SiC attributes provide life cycle benefits:

• Durability: Hardness gives 10-30 times life in abrasives/grinding balls, downtime -60% in the mills.
• Adaptability: From -50°C to 1600°C, from cryo to plasma in a wide range of applications.
• Lightness: 60% steel, aero efficiency +10%; grinding balls reduce the load on the mill.
• Minimal Maintenance: Impact ΔT 600°C, no deformation in heat/refractory.
• Economic value: Energy saving 40% in semiconductors, fast ROI; Grinding balls reduce contamination.
• Environmental safety: Low emissions in EV; recyclable for green mining.
• Reliable Performance: Fatigue >10⁷ cycles; rigid for precision armor.
• Friction durability: Self-lubricating μ<0,2, power loss -20% in the nozzles.
• Friendly to the body: Osseointegration 95%, low implant wear.
• Thermal efficiency: Conducts in 5 times better than aluminum oxide, compact radiators for LEDs.
• Chemical inertness: Resistant to corrosion without HF, vital for chemical pumps.
• Bandgap versatility: 3 eV for blue LEDs up to 1200 In power in EV.

Real Applications of Silicon Carbide Ceramics

SiC shines at abrasive/electronic extremes, its hardness/conductivity is irreplaceable. Below are the expanded top 10:

Top 10 Applications in Modern Industries

1. Silicon Carbide Grinding Balls: High-density media in ball mills, export to 10 times lower than steel, grinding efficiency +25%.
2. Abrasives: Grinding wheels and sandpaper, removal of material in 3 times faster.
3. Refractories: Furnace linings, 1600°C shock resistance.
4. Semiconductors: MOSFET/SiC wafers, EV efficiency +30%, range +20%.
5. Armor: V50 slabs >1200 m/s, lightweight protection.
6. Aerospace: Turbine blades/heat shields at 1400°C.
7. Chemical pumps: Valves/nozzles, resistant to H₂SO₄/NaOH.
8. Medical implants: Low wear <0,01 mm/year.
9. Energy accumulators: High Density Anodes/Capacitors.
10. LEDs: Pads +50% efficiency, -40% cost.

Sectors of application

• Industrial: Abrasives, refractories, pumps, grinding balls.
• Electronics: Diodes and transistors for 5G and EV.
• Aerospace: High Temperature Screens and Components.
• Medicine: Biocompatible implants.
• Energy: Batteries and LEDs for renewable energy sources.

The combination of SiC characteristics cements its role in high technology, the market is valued at $10 billion k 2030 year.

Advanced Silicon Carbide Ceramics: Doped and CVD variants

Standard SiC opaque black/green, however CVD and doped (N/B) options give translucency in IR.

• Problems: obtaining defect-free growth.
• Methods: 4H-SiC epitaxy.
• Applications: RF 5G, quantum devices.
• Prospects: nano-SiC 600 W/m·K; high-density composites for ultra-fine grinding.

How silicon carbide ceramic components are made?

SiC components are formed through powder and steam processes for density >99%. Below is the working flow:

1. Preparation of raw materials

SiO₂/carbon mixture or CVD precursors (SiH₄/C₃H₈). For grinding balls - powder <10 µm.

2. Grinding and mixing

Attritor up to 1–5 μm; binders and dopants are added.

3. Forming methods

• Dry pressing: for balls at 200 MPa.
• Suspension casting: for linings.
• CVD: for substrates at 1000°C.

4. Debinderization

Organic removal up to 800°C.

5. Sintering

2000–2200°C, Ar; HP/RBSC; HIP for high density.

6. Final operations

Diamond grinding to Ra 0,01 µm; ball sorting >99% sphericity.

7. Quality control

X-ray, ASTM bending, CMM.

8. Preparation for delivery

Packaging with certificates, scalable to millions of products per year.

Exit: 95%, ISO 9001.