Silicon carbide ceramics (SiC) Provides exceptional thermal conductivity, hardness and oxidation resistance, enabling efficient heat dissipation and long-lasting performance in harsh industrial and electronic applications.
Silicon Carbide Grinding Ball
Silicon Carbide Bearing Ball
Silicon carbide structural ceramics
Wear-resistant silicon carbide ceramics
We are ready to answer any questions and provide detailed information about our silicon carbide ceramic products (SiC), and comprehensive engineering and manufacturing services. No matter, whether you are in the development phase of a custom prototype or scaling up mass production for extreme industrial environments, our team of experts will help you get the most out of this high-performance material.
SiC ceramics are widely used in mining, energy, chemical, metallurgical and semiconductor industries, where high wear resistance is required, heat resistance and chemical inertness.
We manufacture silicon carbide components strictly according to customer specifications. All key parameters can be configured:
chemical purity and type of SiC (black, green, RBSC, SSC, CVD)
microstructure and phase composition
dimensional tolerances and geometry
finishing machining
Our completed projects include:
high precision abrasive products
fire-resistant and wear-resistant linings
substrates and wafers for semiconductors
ceramic balls made of SiC for grinding ores and cement
Ready to develop custom SiC parts? Contact us - our engineers work with CAD models and rapid prototyping technologies, which allows you to significantly reduce the time it takes to bring products to market.
Silicon carbide (SiC) was opened in 1893 by American chemist Edward Goodrich Acheson. In the process of experiments on the synthesis of diamond, he obtained the material, later called "carborundum", which became the first artificial abrasive, produced on an industrial scale.
Thanks to its hardness 9,5 Mohs scale, SiC already replaced natural abrasives at the beginning of the 20th century.. In the 1920s, it began to be actively used in refractory materials and industrial furnace linings.. After World War II, its semiconductor properties were discovered, including wide bandgap (~3.26 eV), making SiC a key material for power electronics.
Since the 1980s, the development of CVD technologies has made it possible to obtain ultra-pure silicon carbide for LEDs, MOSFET transistors and high voltage devices. Today, global production exceeds 1,5 million tons per year, and the SiC market is valued at more than 5 billion dollars, what do electric cars contribute to?, renewable energy and 5G networks.
Silicon carbide ceramics is a non-oxide covalent material with a unique combination of mechanical properties., thermal and chemical properties:
density: ~3.2 g/cm³ (significantly lower than steel)
hardness: HV ≈ 2100
bending strength: to 400 MPa
operating temperature: to 1600 °C
thermal conductivity: 90-490 W/m·K
coefficient of thermal expansion: ~3,5 × 10⁻⁶ K⁻¹
SiC is resistant to oxidation, corrosion, thermal shock and exposure to most acids and alkalis (except HF). Its self-lubricating microstructure ensures a low coefficient of friction (<0,2), which makes the material ideal for abrasive and dynamically loaded components.
Despite the higher cost compared to aluminum oxide, the service life of SiC products is 10–20 times higher, resulting in low total cost of ownership (TCO) and high economic efficiency.
SiC ceramics are available in various modifications, optimized for specific tasks.
Description:
Produced in Acheson kilns at temperatures of 2200–2500 °C from quartz sand and petroleum coke. SiC content - 97–99%, iron impurities are present.
Advantages:
optimal price/wear resistance ratio
high fracture toughness
Suitable for mass production of abrasives
Application:
Grinding wheels, fireproof materials, wear plates, as well as SiC ceramic balls for grinding mills in the mining and cement industries.
| Property | Units. change. | Test standard | Black SiC | Green SiC | RBSC | SSC | CVD SiC |
| Material | – | – | Black | Green | Porous | Dense | Film |
| Density | g/cm³ | ISO 18754 | 3,15 | 3,20 | 2,7 | 3,10 | 3,21 |
| Bending strength | MPa | ASTM C1161 | 400 | 450 | 250 | 400 | 500 |
| Compressive strength | MPa | GB/T 8489 | 2000 | 2200 | 1500 | 2000 | 2500 |
| Young's modulus | GPa | ASTM C1198 | 430 | 450 | 300 | 410 | 460 |
| Fracture toughness | MPa·m¹/² | ASTM C1421 | 4 | 4,5 | 3 | 4 | 5 |
| Poisson's ratio | – | ASTM C1421 | 0,16 | 0,16 | 0,17 | 0,16 | 0,15 |
| Hardness HRA | HRA | Rockwell 60N | 94 | 95 | 92 | 94 | 96 |
| Vickers hardness | HV1 | ASTM C1327 | 2100 | 2200 | 1800 | 2100 | 2500 |
| Thermal expansion | 10⁻⁶ K⁻¹ | ASTM E1461 | 3,5 | 3,4 | 3,6 | 3,5 | 3,3 |
| Thermal conductivity | W/m·K | ASTM E1461 | 90 | 120 | 50 | 90 | 490 |
| Thermal shock resistance | ΔT (°C) | – | 600 | 650 | 500 | 600 | 700 |
| Max. pace. (oxidation) | °C | No load | 1350 | 1400 | 1200 | 1350 | 1600 |
| Max. pace. (recovery/inert) | °C | No load | 1350 | 1400 | 1400 | 1600 | 2000 |
| Volume resistance (20°C) | Ohm cm | – | 10⁵ | 10⁴ | 10⁶ | 10⁵ | 10³ |
| Dielectric strength | kV/mm | – | 0 | 0 | 5 | 0 | 0 |
| Dielectric constant (1 MHz) | – | ASTM D2149 | N/A | N/A | 10 | N/A | N/A |
| Dielectric losses (20°C, 1 MHz) | tan δ | ASTM D2149 | N/A | N/A | 10⁻² | N/A | N/A |
Note: Values for sintered grades; CVD exceeds (conductivity 490 W/m·K, purity 99,9995%).
Benchmarking for Precision Engineering
SiC excels in conductivity/hardness, superior to oxides in semiconductors/heat. Extended comparison with metals/ceramics:
| Characteristic | SiC ceramics | Aluminum Oxide Ceramics | Steel alloys | Tungsten carbide |
| Strength and Toughness | High (K_IC 4) | Compression-strong, fragile | Ductile, prone to fatigue | High, fragile |
| Thermal stability | Excellent (1600°C) | Excellent (1800°C) | good (~800°C) | Fireproof (2800°C) |
| Wear resistance | Exceptional (HV 2100) | Highest level (HV 1500) | Moderate (rusts) | Elite (HV 2000) |
| Corrosion resistance | Highly inert | Excellent (acids) | Inclined | Strong (acids) |
| Transparency | Opaque (translucent CVD) | Translucent | Opaque | Opaque |
| Biocompatibility | High (ISO 10993) | High | Varies (toxic) | Varies |
| Electrical insulation | Semiconductive (10⁴–10⁵ Ohm cm) | Excellent | Conductive | Conductive |
| Magnetic behavior | Non-magnetic | Non-magnetic | Ferromagnetic | Non-magnetic |
| Price (per kg) | Moderate ($20–50) | Low ($5–20) | Low ($1–5) | High ($100+) |
| Density (g/cm³) | 3,2 | 3,9 | 7,8 | 15,6 |
SiC attributes provide life cycle benefits:
SiC shines at abrasive/electronic extremes, its hardness/conductivity is irreplaceable. Below are the expanded top 10:
The combination of SiC characteristics cements its role in high technology, the market is valued at $10 billion k 2030 year.
Standard SiC opaque black/green, however CVD and doped (N/B) options give translucency in IR.
SiC components are formed through powder and steam processes for density >99%. Below is the working flow:
SiO₂/carbon mixture or CVD precursors (SiH₄/C₃H₈). For grinding balls - powder <10 µm.
Attritor up to 1–5 μm; binders and dopants are added.
Organic removal up to 800°C.
2000–2200°C, Ar; HP/RBSC; HIP for high density.
Diamond grinding to Ra 0,01 µm; ball sorting >99% sphericity.
X-ray, ASTM bending, CMM.
Packaging with certificates, scalable to millions of products per year.
Exit: 95%, ISO 9001.
SiC trajectory: Wider bandgap, greener.
Plates 200 mm for EV, efficiency +40%; nano-SiC grinding for submicron PSR.
3D-printed nozzles/balls, waste -50%.
HA for implants, integration +20%.
Defect-free for qubits.
SiC processing, CO₂ -25%; biochar for Aitchson.
CAGR 15% to $10 billion k 2030 year, EV/renewable; grinding media $2 billion segment.